mca Syllabus

Engineering Science

Basic Electrical and Electronics Engineering-I
Code: ES101
Contacts: 3L + 1T = 4
Credits: 4

Basic Electrical Engineering-I

DC Network Theorem: Definition of electric circuit, network, linear circuit, non-linear circuit, bilateral circuit, unilateral circuit, Dependent source, Kirchhoff’s law, Principle of superposition. Source equivalence and conversion, Thevenin’s theorem, Norton Theorem, nodal analysis, mesh analysis, stardelta conversion. Maximum power transfer theorem with proof.                                                                                                                7L

Electromagnetism: Biot-savart law, Ampere’s circuital law, field calculation using Biot-savart & ampere’s circuital law. Magnetic circuits, Analogous quantities in magnetic and electric circuits, Faraday’s law, Self and mutual inductance. Energy stored in a magnetic field, B-H curve, Hysteretic and Eddy current losses, Lifting power of Electromagnet. 5L

AC fundamental: Production of alternating voltage, waveforms, average and RMS values, peak factor, form factor, phase and phase difference, phasor representation of alternating quantities, phasor diagram, behavior of AC series , parallel and series parallel circuits, Power factor, Power in AC circuit, Effect of frequency variation in RLC series and parallel circuits, Resonance in RLC series and parallel circuit, Q factor, band width of resonant circuit.                                                                                                          9L

Basic Electronics Engineering-I

Instruction: 1 credit means 1 hour; 1 lecture means a lecture of 1 hour duration.
Basic Electronics Engineering - I: 18L + 2L = 20L
Pre-requisites: Knowledge of Class XII level electronics, Physics & Mathematics.

Recapitulation and Orientation lectures: 2L

Module – 1: Semiconductors:                                                                                    4L
Crystalline material: Mechanical properties, Energy band theory, Fermi levels; Conductors, Semiconductors and Insulators: electrical properties, band diagrams. Semiconductors: intrinsic and extrinsic, energy band diagram, electrical conduction phenomenon, P-type and N-type semiconductors, drift and diffusion carriers.

Module – 2: Diodes and Diode Circuits:                                                       3L+3L = 6L
Formation of P-N junction, energy band diagram, built-in-potential forward and reverse biased P-N junction, formation of depletion zone, V-I characteristics, Zener breakdown, Avalanche breakdown and its reverse characteristics; Junction capacitance and Varactor diode. Simple diode circuits, load line, linear piecewise model;
Rectifier circuits: half wave, full wave, PIV, DC voltage and current, ripple factor, efficiency, idea of regulation.

Module – 3: Bipolar Junction Transistors:                                                   6L+2L = 8L
Formation of PNP / NPN junctions, energy band diagram; transistor mechanism and principle of transistors, CE, CB, CC configuration, transistor characteristics: cut-off active and saturation mode, transistor action, injection efficiency, base transport factor and current amplification factors for CB and CE modes.
Biasing and Bias stability: calculation of stability factor;

Outcome:
Students will be able to identify semiconductor materials, draw band-diagrams, distinguish between intrinsic and extrinsic semiconductors, n- and p- type semiconductors, calculate drift and diffusion current components.

Students must be able to explain the junction properties and the phenomenon of rectification, draw the I-V characteristics and identify operating points; Calculate ripple factors, efficiency of power supplies.

Students will be able to draw and explain the I-V characteristics of BJTs – both input and output; learn to bias transistors, both as amplifiers and switches; identify operating points.

Recommended Books:
Text:
9. Sedra & Smith: Microelectronics Engineering.
10. Millman & Halkias: Integrated Electronics.
References:
b) Malvino: Electronic Principle.
c) Schilling & Belove: Electronics Circuits.
d) Millman & Grabal: Microelectronics.
e) Salivahanan: Electronics Devices & Circuits.
f) Boylestad & Nashelsky: Electronic Devices & Circuit Theory